Aging effect of diethanolamine derived precursor sol on TiO2 films deposited at different annealing temperatures
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چکیده
منابع مشابه
Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures
Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochr...
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ژورنال
عنوان ژورنال: Journal of Sol-Gel Science and Technology
سال: 2010
ISSN: 0928-0707,1573-4846
DOI: 10.1007/s10971-010-2167-z